The ISL73024SEH from Renesas is a GaN Power Transistor with a gate threshold voltage of 0.8-2.5 V. It has a drain-to-source voltage of 200 V. This power transistor has a drain-to-gate leakage current of up to 115 µA and a gate-to-source forward leakage current of 0.8-2.5 mA. It comes in a hermetically sealed Surface Mount Device (SMD) package and has a radiation acceptance (TID) of up to 75 krad(Si). The transistor has an input capacitance of 270 pF and an output capacitance of 200 pF. It has a total gate charge of 2.5-5 nC and a gate resistance of 60 mOhm. The transistor is ideally suited for high-reliability applications such as commercial aerospace, medical, and nuclear power generation.
