The ISL73023SEH from Renesas is a GaN Power Transistor with a drain-source voltage of 100 V and a gate threshold voltage of 0.7-3 V.? It has a continuous drain current of up to 60 A with a low drain-source on-resistance of 5-12 mΩ and a total gate charge of 14-25 nC. The transistor has an input capacitance of 1500 pF and an output capacitance of 960-1250 pF. This GaN power transistor has high electron mobility and a low-temperature coefficient. The lateral device structure of the transistor provides for very low gate charge (QG), fast power supply switching frequencies, high power densities, and high efficiency. This compact hermetically packed surface mount GAN power transistor measures 6.05 x 2.3 x 0.685 mm. It is ideal for high-reliability applications such as switching regulation, motor drives, relay drives, inrush protection, and downhole drilling.