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100 V Enhancement Mode GaN Power Transistor

SKU: ISL70023SEH

GaN Power Transistor by Renesas (5 more products)
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ISL70023SEH Image

The ISL70023SEH from Renesas is a GaN Power Transistor with Gate Threshold Voltage 0.7 to 3 V, Drain Source Voltage 100 V, Drain Source Resistance 5 to 12 milli-ohm, Continous Drain Current 60 A, Total Charge 14 to 25 nC. Tags: Surface Mount. More details for ISL70023SEH can be seen below.

Product Specifications

Product Details

  • Part Number
    ISL70023SEH
  • Manufacturer
    Renesas
  • Description
    100 V Enhancement Mode GaN Power Transistor

General Parameters

  • Segment
    Ground
  • Configuration
    Single
  • Gate Threshold Voltage
    0.7 to 3 V
  • Drain Source Voltage
    100 V
  • Drain Source Resistance
    5 to 12 milli-ohm
  • Continous Drain Current
    60 A
  • Total Charge
    14 to 25 nC
  • Input Capacitance
    1500 pF
  • Output Capacitance
    960 to 1250 pF
  • Temperature operating range
    -55 to 125 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Dimensions
    6050µm x 2300µm (238.19 mils x 90.55 mils) Thickness: 685µm (26.97 mils)

Technical Documents
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