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FBG30N04C

GaN Power Transistor by EPC Space (8 more products)
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FBG30N04C Image

The FBG30N04C from EPC Space is a GaN Power Transistor with Gate Threshold Voltage 0.8 to 2.8 V, Drain Source Voltage 300 V, Drain Source Resistance 210 to 400 milli-ohm, Continous Drain Current 4 A, Pulsed Drain Current 12 A. Tags: Surface Mount. More details for FBG30N04C can be seen below.

Product Specifications

Product Details

  • Part Number
    FBG30N04C
  • Manufacturer
    EPC Space
  • Description
    Rad Hard eGaN HEMT for Commercial Satellite EPS & Avionics Applications

General Parameters

  • Segment
    Satellite
  • Configuration
    Single
  • Gate Threshold Voltage
    0.8 to 2.8 V
  • Drain Source Voltage
    300 V
  • Drain Source Resistance
    210 to 400 milli-ohm
  • Continous Drain Current
    4 A
  • Pulsed Drain Current
    12 A
  • Total Charge
    1.6 to 2.6 nC
  • Input Capacitance
    380 to 450 pF
  • Output Capacitance
    48 to 60 pF
  • Temperature operating range
    -55 to 150 Degree C
  • Package Type
    Surface Mount
  • Dimensions
    4.4 x 4.4 mm

Technical Documents
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