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200 V Radiation Hard GaN HEMT for Deep Space Applications

SKU: FBG20N04A

GaN Power Transistor by EPC Space (8 more products)
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FBG20N04A Image

The FBG20N04A from EPC Space is a GaN Power Transistor with Gate Threshold Voltage 0.8 to 2.8 V, Drain Source Voltage 200 V, Drain Source Resistance 68 to 130 milli-ohm, Continous Drain Current 4 A, Pulsed Drain Current 16 A. Tags: Surface Mount. More details for FBG20N04A can be seen below.

Product Specifications

Product Details

  • Part Number
    FBG20N04A
  • Manufacturer
    EPC Space
  • Description
    200 V Radiation Hard GaN HEMT for Deep Space Applications

General Parameters

  • Segment
    Satellite
  • Configuration
    Single
  • Gate Threshold Voltage
    0.8 to 2.8 V
  • Drain Source Voltage
    200 V
  • Drain Source Resistance
    68 to 130 milli-ohm
  • Continous Drain Current
    4 A
  • Pulsed Drain Current
    16 A
  • Total Charge
    1.6 to 3 nC
  • Input Capacitance
    106 to 150 pF
  • Output Capacitance
    72 to 90 pF
  • Temperature operating range
    -55 to 150 Degree C
  • Package Type
    Surface Mount
  • Dimensions
    3.4 x 3.4 mm

Technical Documents
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