The FBG10N05A from EPC Space is an Enhancement Mode GaN Power Transistor. The transistor has a gate-source threshold voltage of up to 2.5 V, a drain-source voltage of over 100 V, and a drain-source on-state resistance of up to 45 mΩ. It has a continuous drain current of 5 A and a pulsed drain current of 20 A. This radiation-hardened transistor has a very low gate charge of 2.2 nC and a gate resistance of 0.4 Ω. It has high electron mobility and a low-temperature coefficient resulting in very low RDS(on) values. The lateral structure of the die provides for a very low gate charge (QG) that enables faster power supply switching frequencies resulting in higher power densities, higher efficiencies, and more compact packaging. This eGaN transistor has a mass of 0.0068 gms and is ideal for applications such as Satellite and Avionics, Deep Space Probes, High-Speed Rad Hard DC-DC Conversion, and Rad-Hard Motor controllers.