The FBG04N30B from EPC Space is an eGaN Power-Switching HEMT that is designed for critical applications in high-reliability or commercial satellite space environments. It has a drain-source voltage of 40 V, a continuous drain current of 30 A, and a single-pulse drain current of 120 A. This compact transistor has a mass of 0.135 grams and drain-source on-state resistance of 10 mohms. It has high electron mobility and a low-temperature coefficient resulting in very low RDS(on) values. The lateral structure of the die provides for a very low gate charge (QG) and extremely fast switching times. This radiation-hardened transistor has faster power supply switching frequencies resulting in higher power densities, and higher efficiencies. It measures 5.7 x 3.9 mm and is ideal for applications such as satellite and avionics, deep space probes, high-speed radiation-hardened DC-DC conversion, and radiation-hardened motor controllers.