The FBG10N30B by EPC Space is a Radiation-Hardened Enhancement Mode GAN Transistor that is designed for critical applications in high-reliability and commercial satellite space environments. It has a drain-source voltage of 40 V and a gate threshold voltage of 2.5 V.  It has a continuous drain current of up to 8 A and a pulsed drain current of less than 32 A. This power-switching HEMT has a low drain-source on-resistance of 28 mΩ, a total gate charge of 2.2 nC, and a gate-drain charge of 0.1 nC. It has high electron mobility and a low-temperature coefficient. The lateral structure of the die provides for very low gate charge (QG), fast power supply switching frequencies, high power densities, and high efficiency. This compact hermetically packed surface mount eGAN transistor measures 3.42 x 3.42 mm. It weighs 0.068 grams and is ideal for applications such as satellites, avionics, deep space probes high-speed Rad Hard DC-DC conversion, and motor controllers.