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40 V eGaN HEMT for Commercial Satellite Applications

SKU: EPC7019G

GaN Power Transistor by EPC Space (8 more products)
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EPC7019G Image

The EPC7019G from EPC Space is a GaN Power Transistor with Gate Threshold Voltage 0.8 to 2.5 V, Drain Source Voltage 40 V, Drain Source Resistance 3.7 milliohm, Continous Drain Current 95 A, Pulsed Drain Current 530 A. Tags: Surface Mount. More details for EPC7019G can be seen below.

Product Specifications

Product Details

  • Part Number
    EPC7019G
  • Manufacturer
    EPC Space
  • Description
    40 V eGaN HEMT for Commercial Satellite Applications

General Parameters

  • Segment
    Satellite
  • Configuration
    Dual
  • Gate Threshold Voltage
    0.8 to 2.5 V
  • Drain Source Voltage
    40 V
  • Drain Source Resistance
    3.7 milliohm
  • Continous Drain Current
    95 A
  • Pulsed Drain Current
    530 A
  • Total Charge
    22 nC
  • Input Capacitance
    2830 pF
  • Output Capacitance
    1660 pF
  • Temperature operating range
    -55 to 150 Degree C
  • Package Type
    Surface Mount
  • Dimensions
    8.0 x 5.6 mm

Technical Documents
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