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Rad Hard e-GaN HEMT for Commercial Satellite Space Environments

SKU: EPC7014UB

GaN Power Transistor by EPC Space (8 more products)
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EPC7014UB Image

The EPC7014UB from EPC Space is a GaN Power Transistor with Gate Threshold Voltage 0.8 to 2.5 V, Drain Source Voltage 60 V, Drain Source Resistance 340 to 580 milli-ohm, Continous Drain Current 1 A, Pulsed Drain Current 4 A. Tags: Surface Mount. More details for EPC7014UB can be seen below.

Product Specifications

Product Details

  • Part Number
    EPC7014UB
  • Manufacturer
    EPC Space
  • Description
    Rad Hard e-GaN HEMT for Commercial Satellite Space Environments

General Parameters

  • Segment
    Satellite
  • Configuration
    Single
  • Gate Threshold Voltage
    0.8 to 2.5 V
  • Drain Source Voltage
    60 V
  • Drain Source Resistance
    340 to 580 milli-ohm
  • Continous Drain Current
    1 A
  • Pulsed Drain Current
    4 A
  • Total Charge
    0.142 to 0.184 nC
  • Input Capacitance
    16 to 22 pF
  • Output Capacitance
    0.1 pF
  • Temperature operating range
    -55 to 150 Degree C
  • Package Type
    Surface Mount
  • Dimensions
    3.25 x 2.74 mm

Technical Documents
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