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Rad Hard GaN Power Transistor for Deep Space Applications

SKU: EPC7019

GaN Power Transistor by Efficient Power Conversion (8 more products)
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EPC7019 Image

The EPC7019 from Efficient Power Conversion is a GaN Power Transistor with Gate Threshold Voltage 800 to 2500 mV, Drain Source Voltage 40 V, Drain Source Resistance 1.2 to 1.5 milli-ohm, Continous Drain Current 95 A, Pulsed Drain Current 530 A. Tags: Die. More details for EPC7019 can be seen below.

Product Specifications

Product Details

  • Part Number
    EPC7019
  • Manufacturer
    Efficient Power Conversion
  • Description
    Rad Hard GaN Power Transistor for Deep Space Applications

General Parameters

  • Segment
    Satellite
  • Gate Threshold Voltage
    800 to 2500 mV
  • Drain Source Voltage
    40 V
  • Drain Source Resistance
    1.2 to 1.5 milli-ohm
  • Continous Drain Current
    95 A
  • Pulsed Drain Current
    530 A
  • Total Charge
    22 nC
  • Input Capacitance
    2830 pF
  • Output Capacitance
    1660 pF
  • Temperature operating range
    -55 to 150 degree C
  • Package Type
    Die
  • Dimensions
    6.05 x 2.3 mm

Technical Documents
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