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100V, 42 A Rad Hard Enhancement Mode GaN Transistor

SKU: EPC7003

GaN Power Transistor by Efficient Power Conversion (8 more products)
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The EPC7003 from Efficient Power Conversion is a GaN Power Transistor with Gate Threshold Voltage 0.8 to 2.5 V, Drain Source Voltage 100 V, Drain Source Resistance 18 to 30 mOhms, Continous Drain Current 10 A, Pulsed Drain Current 42 A. Tags: Die. More details for EPC7003 can be seen below.

Product Specifications

Product Details

  • Part Number
    EPC7003
  • Manufacturer
    Efficient Power Conversion
  • Description
    100V, 42 A Rad Hard Enhancement Mode GaN Transistor

General Parameters

  • Segment
    Satellite
  • Gate Threshold Voltage
    0.8 to 2.5 V
  • Drain Source Voltage
    100 V
  • Drain Source Resistance
    18 to 30 mOhms
  • Continous Drain Current
    10 A
  • Pulsed Drain Current
    42 A
  • Total Charge
    1.8 to 2.5 nC
  • Input Capacitance
    230 to 313 pF
  • Output Capacitance
    119 to 143 pF
  • Temperature operating range
    -55 to 150 Degree C
  • Package Type
    Die
  • Dimensions
    1.7 x 1.1 mm

Technical Documents
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