Honeywell Aerospace one of the global leaders and manufacturers of products for aerospace applications and radiation-hardened environments has introduced a new high-performance monolithic 128K x 8 SRAM.
The HLX6228 from Honeywell Aerospace is a monolithic 128K x 8 Radiation Hardened Static RAM. It is a high-performance 131,072 word x 8-bit static random access memory. It is fabricated with Honeywell’s radiation-hardened technology and is designed for use in systems operating in radiation environments.
The SRAM operates over the full military temperature range and requires only a single 3.3V power supply. The SRAM is available with CMOS-compatible I/O. Power consumption is typically 360mW at 40MHz operation and less than 2mW when de-selected. SRAM operation is fully asynchronous, with a typical access time of 18ns. It is available in package and bare die forms.
Honeywell’s enhanced SOI RICMOS IV (Radiation Insensitive CMOS) technology is radiation hardened through the use of advanced and proprietary design, layout, and process hardening techniques. The RICMOS IV low power process is a 3.3V, SOI CMOS technology with a 150-angstrom gate oxide and a minimum drawn feature size of 0.7um.
The memory cell is single event upset hardened, while multi-layer metal power busing and small collection volumes of SOI provide superior single event effect and dose rate hardening.
Total Ionizing Dose Radiation
The SRAM radiation hardness assurance TID level was qualified by 60Co testing, including overdose and accelerated annealing, per MIL-STD-883 Method 1019. Ongoing assurance is provided by wafer-level X-ray testing during manufacturing.
Click here to learn more about HLX6228 SRAM from Honeywell Aerospace.
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