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Space Qualified MOSFETs - Page 30

317 Space Qualified MOSFETs from 6 Manufacturers meet your specification.
IRHNS57264SE Image
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Infineon Technologies - IRHNS57264SE

Space Qualified MOSFETs from Infineon Technologies
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Description:250 V, 165 nC, N-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
45 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
60 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 150 Degree C
Package:
SupIR-SMD
more info
IRHNS57Z60 Image
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Infineon Technologies - IRHNS57Z60

Space Qualified MOSFETs from Infineon Technologies
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Description:30 V, 200 nC, N-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
75 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
3.5 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 150 Degree C
Package:
SupIR-SMD
more info
IRHNM57110 Image
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Infineon Technologies - IRHNM57110

Space Qualified MOSFETs from Infineon Technologies
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Description:100 V, 15 nC, N-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
6.9 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
15 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
23 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD-0.2
more info
IRHY9230CM Image
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Infineon Technologies - IRHY9230CM

Space Qualified MOSFETs from Infineon Technologies
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Description:-200 V, 45 nC, P-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-6.5 A
Drain Source Breakdown Voltage:
-200 V
Drain Source Resistance:
800 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-257AA
more info
IRHNA7260SE Image
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Infineon Technologies - IRHNA7260SE

Space Qualified MOSFETs from Infineon Technologies
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Description:200 V, 290 nC, N-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
43 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
77 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
300 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD-2
more info
IRHNA7360SE Image
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Infineon Technologies - IRHNA7360SE

Space Qualified MOSFETs from Infineon Technologies
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Description:400 V, 250 nC, N-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
24 A
Drain Source Breakdown Voltage:
400 V
Drain Source Resistance:
210 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
300 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD-2
more info
IRHNA7460SE Image
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Infineon Technologies - IRHNA7460SE

Space Qualified MOSFETs from Infineon Technologies
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Description:500 V, 220 nC, N-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
20 A
Drain Source Breakdown Voltage:
500 V
Drain Source Resistance:
360 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
300 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD-2
more info
IRHNJ9A7034 Image
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Infineon Technologies - IRHNJ9A7034

Space Qualified MOSFETs from Infineon Technologies
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Description:60 V, 45 nC, N-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
40 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
18 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD-0.5
more info
IRHNJ9A7130 Image
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Infineon Technologies - IRHNJ9A7130

Space Qualified MOSFETs from Infineon Technologies
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Description:100 V, 48 nC, N-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
35 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
34 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD-0.5
more info
IRHNJ9A7234 Image
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Infineon Technologies - IRHNJ9A7234

Space Qualified MOSFETs from Infineon Technologies
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Description:250 V, 34 nC, N-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
17 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
110 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD-0.5
more info
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