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Space Qualified MOSFETs - Page 28

317 Space Qualified MOSFETs from 6 Manufacturers meet your specification.
IRHLYS77034CM Image
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Infineon Technologies - IRHLYS77034CM

Space Qualified MOSFETs from Infineon Technologies
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Description:60 V, 34 nC, N-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
20 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
45 milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-257AA Low Ohmic
more info
IRHLYS797034CM Image
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Infineon Technologies - IRHLYS797034CM

Space Qualified MOSFETs from Infineon Technologies
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Description:-60 V, 36 nC, P-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-20 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
74 milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-257AA
more info
IRHM57064 Image
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Infineon Technologies - IRHM57064

Space Qualified MOSFETs from Infineon Technologies
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Description:60 V, 160 nC, N-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
35 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
12 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
208 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA
more info
IRHNA67264 Image
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Infineon Technologies - IRHNA67264

Space Qualified MOSFETs from Infineon Technologies
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Description:250 V, 220 nC, N-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
50 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
40 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD-2
more info
IRHNA57264SE Image
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Infineon Technologies - IRHNA57264SE

Space Qualified MOSFETs from Infineon Technologies
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Description:250 V, 165 nC, N-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
45 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
250 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD-2
more info
IRHNA57163SE Image
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Infineon Technologies - IRHNA57163SE

Space Qualified MOSFETs from Infineon Technologies
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Description:130 V, 160 nC, N-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
75 A
Drain Source Breakdown Voltage:
130 V
Drain Source Resistance:
13.5 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD-2
more info
IRHN9150 Image
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Infineon Technologies - IRHN9150

Space Qualified MOSFETs from Infineon Technologies
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Description:-100 V, 200 nC, P-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-22 A
Drain Source Breakdown Voltage:
-100 V
Drain Source Resistance:
85 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
150 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD-1
more info
IRHLNA77064 Image
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Infineon Technologies - IRHLNA77064

Space Qualified MOSFETs from Infineon Technologies
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Description:60 V Radiation Hardened N-Channel Power MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
56 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
12 milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD-2
more info
IRHMS6S7264 Image
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Infineon Technologies - IRHMS6S7264

Space Qualified MOSFETs from Infineon Technologies
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Description:250 V N-Channel Radiation Hardened Power MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
45 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
41 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
208 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA
more info
IRHMS67164 Image
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Infineon Technologies - IRHMS67164

Space Qualified MOSFETs from Infineon Technologies
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Description:150 V, 230 nC, N-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
45 A
Drain Source Breakdown Voltage:
150 V
Drain Source Resistance:
19 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
208 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA Low Ohmic
more info
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