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250 V, 40 nC, N-Channel Enhancement Mode MOSFET

SKU: IRHYS67234CM

Space Qualified MOSFETs by Infineon Technologies (301 more products)
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IRHYS67234CM Image

The IRHYS67234CM from Infineon Technologies is a Space Qualified MOSFETs with Continous Drain Current 12 A, Drain Source Resistance 220 milliohm, Drain Source Breakdown Voltage 250 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for IRHYS67234CM can be seen below.

Product Specifications

Product Details

  • Part Number
    IRHYS67234CM
  • Manufacturer
    Infineon Technologies
  • Description
    250 V, 40 nC, N-Channel Enhancement Mode MOSFET

General Parameters

  • Segment
    Satellite
  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    12 A
  • Drain Source Resistance
    220 milliohm
  • Drain Source Breakdown Voltage
    250 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    40 nC
  • Power Dissipation
    75 W
  • Temperature operating range
    -55 to 150 Degree C
  • Package Type
    Through Hole
  • Package
    TO-257AA

Technical Documents
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