The IRHMS6S7264 from Infineon Technologies is a Space Qualified MOSFETs with a drain-to-source breakdown voltage of 250 V and a gate-to-source voltage of +/- 20 V. This radiation-hardened MOSFET has a continuous drain current range of 28.5-45 A and a pulsed drain current of 180 A. It has a gate-to-source threshold voltage range of 2-4 V and a drain-to-source resistance of 41 milliohm. The MOSFET has a radiation tolerance TID of up to 100 krad (Si) and is single event effect (SEE) hardened. It has a total gate charge of 220 nC and a maximum power dissipation of 208 W. The MOSFET has a rise time of 125 ns and a fall time of 30 ns. It comes in a hermetically sealed ceramic package and is qualified according to MIL-PRF-19500 for space applications. The MOSFET is ideal for applications such as DC-DC converters and motor controllers.