The IRHLUBC770Z4 from Infineon Technologies is a Radiation-Hardened N-Channel Power MOSFET with a continuous drain current of 0.5-0.8 A and a pulsed drain current of 3.2 A. This MOSFET has a gate-to-source voltage range of -10 to 10 V and a maximum power dissipation of 0.6 V. It is qualified according to MIL-PRF-19500 for space applications with a TID level of 100 krad(Si) and is Single event effect (SEE) hardened.  The MOSFET has a drain-to-source breakdown voltage of 60 V and a total gate charge of 3.6 nC. It weighs 43 mg and is ideal when used to interface directly with most logic gates, linear ICs, microcontrollers, and other device types that operate from a 3.3-5V source.