The IRHLNA77064 from Infineon Technologies is a Space Qualified MOSFET with a gate-to-source voltage of +/- 10 V and a continuous drain current of 56 A. This MOSFET has a maximum power dissipation of up to 250 W and a gate threshold voltage of 1-2 V. It has a radiation tolerance TID of up to 100 kRads (Si) and is Single Event Effect (SEE) hardened. The MOSFET has a drain-source resistance value of 12 milliohms and a drain-source breakdown voltage of 60 V. It has a mass of 3.3 g and comes in a hermetically sealed ceramic package. This MOSFET is designed using IR HiRel R7 technology which makes it ideal for space and satellite applications.
