The IRHF597230 from Infineon Technologies is a Space-Qualified Power MOSFET that has a gate-source voltage of 20 V. It has a continuous drain current of -4.5 A and a pulsed drain current of -18 A. This radiation-hardened MOSFET has a maximum power dissipation of 25 W and a low drain-source on-state resistance of 0.54 ohms. It has a low total gate charge of 40 nC, a gate threshold voltage of -2 to -4 V, and a mass of 0.98 g. This p-channel MOSFET provides voltage control, fast switching, and temperature stability of electrical parameters. It is designed using MIL-STD-750 standards and is ideal for space applications.
