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30 V, 65 nC, N-Channel Enhancement Mode MOSFET

SKU: IRHE57Z30

Space Qualified MOSFETs by Infineon Technologies (301 more products)
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IRHE57Z30 Image

The IRHE57Z30 from Infineon Technologies is a Space Qualified MOSFETs with Continous Drain Current 12 A, Drain Source Resistance 70 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for IRHE57Z30 can be seen below.

Product Specifications

Product Details

  • Part Number
    IRHE57Z30
  • Manufacturer
    Infineon Technologies
  • Description
    30 V, 65 nC, N-Channel Enhancement Mode MOSFET

General Parameters

  • Segment
    Satellite
  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    12 A
  • Drain Source Resistance
    70 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    65 nC
  • Power Dissipation
    25 W
  • Temperature operating range
    -55 to 150 Degree C
  • Package Type
    Surface Mount
  • Package
    18-pin LCC

Technical Documents
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